| PART |
Description |
Maker |
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29DL323BE90PBT MBM29DL323BE90TN MBM29DL323BE90T |
2M X 16 FLASH 2.7V PROM, 120 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 80 ns, PBGA63
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PBGA63
TVS UNIDIRECT 600W 51V SMB 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
MICRO SINGLE MODE FIBER TRANCEIVER, ST 32M的（4米8/2M × 16）位双操
32M (4M x 8/2M x 16) BIT Dual Operation 2M X 16 FLASH 3V PROM, 120 ns, PDSO48
32M (4M x 8/2M x 16) BIT Dual Operation 32M的（4米8/2M × 16）位双操
KPT 6C 6#20 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 PORT MODULAR SWITCH ROHS VERSION
LE1416A BLANK FACE PLATE
4 PORT 100 MB SINGLE-MODEFIBER
XSNT SUPPR,ESD,060.00V,0603
MULTI-WAY IEC PANEL OUTLET
8 PORT MODULAR SWITCH
PCI 10BASE T/10 BASE FL NIC, S
TVS UNI-DIR 43V 600W SMB
|
Fujitsu, Ltd.
Fujitsu Limited
http://
Fujitsu Component Limited.
|
| W25Q80 W25Q16 W25Q32 |
8M-BIT, 16M-BIT AND 32M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI
|
Winbond
|
| MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
| MB82DP02183C-65L MB82DP02183C-65LPBT MB82DP02183C- |
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, UUC
32M Bit (2 M word 16 bit) Mobile Phone Application Specific Memory 2M X 16 STANDARD SRAM, 65 ns, PBGA71
32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
| KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16）的CMOS掩模ROM2兆位Mx8 / 2Mx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11 |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作
NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited.
Fujitsu, Ltd.
FUJITSU LTD
|
| UPD23C32040ALGY-XXX-MJH UPD23C32080ALGY-XXX-MJH UP |
32M-bit (4M-wordx8-bit/2M-wordx16-bit) Mask ROM
|
NEC
|
| K3P6C2000B-SC |
32M-Bit (2Mx16 /1Mx32) CMOS MASK ROM 32兆位Mx16 / 1Mx32）的CMOS掩膜ROM
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MC-222272F9-B85X-BT3 MC-222272-X |
MCP(32M-bit flash memory 8M-bit Low Power SRAM)
|
NEC
|
